FGH60N60SMD – 600V, 60A Field Stop IGBT – onsemi

Key features:

  • 600V collector-emitter breakdown voltage
  • 120A DC collector current (60A specified)
  • Low saturation voltage: 1.9V (typ.) at 60A
  • Field Stop Trench IGBT technology
  • 175°C maximum junction temperature
  • Positive temperature coefficient for easy parallel operation
  • Fast switching with 39ns reverse recovery time
  • High input impedance
  • Tight parameter distribution
  • TO-247 package
  • RoHS compliant

The FGH60N60SMD is an N-channel Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) manufactured by onsemi (formerly Fairchild Semiconductor) . It is designed using novel Field Stop IGBT technology, delivering optimal performance for high-power switching applications where low conduction and switching losses are essential .

The device features a 600V collector-emitter breakdown voltage and can handle up to 120A of DC collector current (60A specified for certain test conditions) . Its typical saturation voltage is 1.9V at 60A, minimizing conduction losses during operation .

Key design advantages include a positive temperature coefficient, which allows multiple devices to be paralleled without thermal runaway issues, and a 175°C maximum junction temperature for reliable operation in demanding environments . The device also features tight parameter distribution, ensuring consistent performance across production batches .

The FGH60N60SMD is packaged in a TO-247-3 through-hole package, providing excellent thermal dissipation for high-power applications.

Parameters

Parameters Specifications
Manufacturer onsemi (formerly Fairchild)
Part Number FGH60N60SMD
IGBT Type Field Stop Trench
Collector-Emitter Voltage (Vces) 600V
DC Collector Current (Ic) Max 120A
Pulsed Collector Current (Icm) 180A
Saturation Voltage VCE(sat) Typ 1.9V @ Ic = 60A
Saturation Voltage VCE(sat) Max 2.5V @ Ic = 60A, Vge = 15V
Gate-Emitter Voltage (Vge) ±30V
Power Dissipation (Pd) 600W
Total Gate Charge (Qg) 189nC
Input Capacitance (Cies) 2915pF
Output Capacitance (Coes) 270pF
Reverse Transfer Capacitance (Cres) 85pF
Turn-On Delay Time (Td(on)) 18ns
Turn-Off Delay Time (Td(off)) 104ns
Turn-On Switching Loss (Eon) 1.26mJ
Turn-Off Switching Loss (Eoff) 450µJ
Reverse Recovery Time (Trr) 39ns
Gate Threshold Voltage (Vge(th)) 3.5V @ 250µA
Operating Junction Temperature -55°C to +175°C
Package Type TO-247-3
Mounting Type Through Hole
RoHS Compliant Yes

Applications

  • Solar Inverters – DC-AC power conversion for photovoltaic systems

  • Uninterruptible Power Supplies (UPS) – Backup power switching and regulation

  • Welding Equipment – High-current switching for inverter welders

  • Power Factor Correction (PFC) – Active power factor correction circuits

  • Switch-Mode Power Supplies (SMPS) – High-efficiency power conversion

  • Telecommunications Power Systems – Rectifier and backup power units

  • Energy Storage Systems (ESS) – Battery power conversion and management

  • Induction Heating (IH) – High-frequency heating applications

  • Motor Control – Variable frequency drives and industrial motor control


Note: The FGH60N60SMD is an active, in-production device from onsemi . For automotive-qualified applications requiring AEC-Q101 certification, consider the FGH60N60SMD_F085 variant.

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