The FGH60N60SMD is an N-channel Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) manufactured by onsemi (formerly Fairchild Semiconductor) . It is designed using novel Field Stop IGBT technology, delivering optimal performance for high-power switching applications where low conduction and switching losses are essential .
The device features a 600V collector-emitter breakdown voltage and can handle up to 120A of DC collector current (60A specified for certain test conditions) . Its typical saturation voltage is 1.9V at 60A, minimizing conduction losses during operation .
Key design advantages include a positive temperature coefficient, which allows multiple devices to be paralleled without thermal runaway issues, and a 175°C maximum junction temperature for reliable operation in demanding environments . The device also features tight parameter distribution, ensuring consistent performance across production batches .
The FGH60N60SMD is packaged in a TO-247-3 through-hole package, providing excellent thermal dissipation for high-power applications.




