irf3205 – n channel power mosfet – infineon technologies

IRF3205 – N Channel Power MOSFET – Infineon Technologies

Key features:

  • N-Channel Power MOSFET
  • Drain-Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 110A
  • Ultra Low On-Resistance: 8.0mΩ (max)
  • Logic Level Gate Drive (2V – 4V threshold)
  • Fast Switching Speed
  • Fully Avalanche Rated
  • 175°C Maximum Operating Temperature
  • TO-220 Through-Hole Package
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The IRF3205 is a high-current N-Channel Power MOSFET manufactured by Infineon Technologies(formerly International Rectifier) . It is part of the advanced HEXFET® power MOSFET family, utilizing fifth-generation processing techniques to achieve extremely low on-resistance per silicon area .

The device is specifically designed for high-power switching applications, capable of handling up to 110A of continuous drain current and 55V drain-source voltage . Its ultra-low on-resistance of 8.0mΩ minimizes conduction losses, while the fast switching speed enables high-efficiency operation in switching power supplies, motor drives, and inverters .

A key feature of the IRF3205 is its avalanche rating, allowing it to safely withstand voltage transients without failure . The device also features a dynamic dv/dt rating and is fully avalanche rated, making it suitable for rugged industrial environments.

The IRF3205 is available in multiple package variants:

  • IRF3205PBF: TO-220 through-hole (PbF lead-free)

  • IRF3205SPBF: D2Pak (TO-263) surface mount

  • IRF3205LPBF: TO-262 through-hole

The “Z” variants (e.g., IRF3205Z) offer even lower on-resistance (6.5mΩ) and improved performance for automotive applications.

Parameters

Parameters Specifications
Manufacturer Infineon Technologies
Part Number IRF3205 (IRF3205PBF)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 55V
Continuous Drain Current (Id) @ 25°C 110A
Continuous Drain Current (Id) @ 100°C 80A
Pulsed Drain Current (Idm) 390A
Gate-Source Voltage (Vgs) Max ±20V
On-Resistance Rds(on) Typ/Max 8.0mΩ (max @ Vgs=10V, Id=62A)
Gate Threshold Voltage Vgs(th) 2.0V – 4.0V
Total Gate Charge (Qg) Typ 146nC
Input Capacitance (Ciss) Typ 3247pF
Output Capacitance (Coss) Typ 550pF
Reverse Transfer Capacitance (Crss) 310pF
Rise Time (tr) Typ 101ns
Fall Time (tf) Typ 65ns
Power Dissipation (Pd) Max 200W
Avalanche Energy (Ear) Max 20mJ
Avalanche Current (Iar) Max 62A
Maximum Junction Temperature -55°C to +175°C
Package Type TO-220AB, D2Pak (TO-263), TO-262
RoHS Compliant Yes (PBF suffix)

Applications

  • DC-DC Converters – Buck/boost converters in power supplies and battery chargers

  • Motor Control – DC motor drives, BLDC motor controllers, robotics, power tools

  • Inverters – DC-AC power inverters for solar and backup power systems

  • Switched-Mode Power Supplies (SMPS) – High-efficiency power conversion

  • Audio Amplifiers – High-power Class D audio amplifiers (up to 200W)

  • Battery Management Systems – Load switching and protection circuits

  • Automotive Electronics – Aftermarket automotive systems, power distribution (within 55V rating)

  • Industrial Automation – PLC output stages, solenoid drivers, relay replacements

  • Uninterruptible Power Supplies (UPS) – Power switching and regulation

Why choose IRF3205: With its 110A current capability and 8.0mΩ on-resistance, the IRF3205 is ideal for high-power switching applications where efficiency and low conduction losses are critical. For surface-mount designs, choose the IRF3205S (D2Pak variant). For applications requiring logic-level gate drive (3.3V/5V), consider the IRLZ44N instead, as the IRF3205 requires approximately 10V for optimal conduction.

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