The STF7N65M2 is an N‑channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology . This technology combines a strip layout with an improved vertical structure, resulting in both low on-resistance and optimized switching characteristics, making it suitable for demanding high-efficiency converters .
The device features a 650V drain-source breakdown voltage and can handle 5A of continuous drain current, with a typical on-resistance of just 0.98Ω . The extremely low gate charge of 9nC and low input capacitance (270pF) enable fast switching operation with reduced driving losses .
Key built‑in protections include 100% avalanche testing to ensure ruggedness against voltage transients, and Zener‑protected gate circuitry to enhance reliability . The TO-220FP (Full Pack) package features a fully molded, isolated case, which simplifies heat sink installation as no insulating washers are required.
The “F” in the part number indicates the TO‑220FP (Full Pack) package, which is electrically isolated. For other package variants, STMicroelectronics offers:
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STP7N65M2 – TO-220 (non‑isolated)
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STU7N65M2 – IPAK (TO‑251)
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STD7N65M2 – DPAK (TO‑252) surface mount




