The IKW40N120H3 is a 1200V high-speed IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, part of the HighSpeed 3 (H3) family. This device integrates a TRENCHSTOP™ and Fieldstop technology IGBT with a soft, fast recovery anti-parallel diode in a single TO-247-3 package (DuoPack).
The device is specifically designed to replace planar MOSFETs in applications switching at frequencies below 70kHz, offering improved efficiency and cost-effectiveness. A key distinguishing feature of this family is the MOSFET-like turn-off switching behavior, which results in significantly reduced turn-off losses compared to previous generations.
The IKW40N120H3 features a maximum junction temperature of 175°C, providing enhanced thermal design margin for demanding power applications. It also offers short-circuit capability (10µs withstand time) and allows the use of low gate resistors (down to 5Ω) while maintaining excellent switching behavior and low EMI emissions.
The “H3” designation indicates the third generation of Infineon’s high-speed IGBT series, optimized for hard-switching topologies requiring high frequency operation (20kHz to 100kHz).




