IKW40N120H3 – 1200V High Speed IGBT with Anti-Parallel Diode – Infineon Technologies

Key features:

  • 1200V collector-emitter voltage (V(BR)CES)
  • 80A DC collector current (40A at 100°C)
  • Low saturation voltage: 2.05V (typ.) at 40A
  • TRENCHSTOP™ and Fieldstop technology
  • MOSFET-like turn-off switching behavior
  • Soft, fast recovery anti-parallel diode included
  • Low switching losses with 4.4mJ total switching energy
  • Maximum junction temperature: 175°C
  • Short circuit capability (t_SC = 10µs)
  • Low EMI emissions
  • TO-247-3 package
  • RoHS compliant and lead-free

The IKW40N120H3 is a 1200V high-speed IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, part of the HighSpeed 3 (H3) family. This device integrates a TRENCHSTOP™ and Fieldstop technology IGBT with a soft, fast recovery anti-parallel diode in a single TO-247-3 package (DuoPack).

The device is specifically designed to replace planar MOSFETs in applications switching at frequencies below 70kHz, offering improved efficiency and cost-effectiveness. A key distinguishing feature of this family is the MOSFET-like turn-off switching behavior, which results in significantly reduced turn-off losses compared to previous generations.

The IKW40N120H3 features a maximum junction temperature of 175°C, providing enhanced thermal design margin for demanding power applications. It also offers short-circuit capability (10µs withstand time) and allows the use of low gate resistors (down to 5Ω) while maintaining excellent switching behavior and low EMI emissions.

The “H3” designation indicates the third generation of Infineon’s high-speed IGBT series, optimized for hard-switching topologies requiring high frequency operation (20kHz to 100kHz).

Parameters

Parameters Specifications
Manufacturer Infineon Technologies
Part Number IKW40N120H3 (IKW40N120H3FKSA1)
IGBT Type Trench Field Stop / TRENCHSTOP™
Collector-Emitter Voltage (Vces) 1200V
DC Collector Current (Ic) @ 25°C 80A
DC Collector Current (Ic) @ 100°C 40A
Pulsed Collector Current (Icm) 160A
Saturation Voltage VCE(sat) Typ 2.05V @ 40A, Vge=15V, Tvj=25°C
Saturation Voltage VCE(sat) Max 2.4V @ 40A, Vge=15V
Gate-Emitter Voltage (Vge) ±20V
Gate Threshold Voltage (Vge(th)) 5V @ 1mA (typ. 6.5V)
Power Dissipation (Pd) 483W
Total Gate Charge (Qg) 185nC @ 15V
Input Capacitance (Cies) 2.33nF
Reverse Transfer Capacitance (Cres) 130pF
Turn-On Delay Time (Td(on)) 30ns
Turn-Off Delay Time (Td(off)) 290ns
Rise Time (tr) 57ns
Fall Time (tf) 16ns
Turn-On Switching Loss (Eon) 3.2mJ
Turn-Off Switching Loss (Eoff) 1.2mJ
Total Switching Energy (Ets) 4.4mJ
Reverse Recovery Time (trr) 355ns
Short Circuit Withstand Time (t_SC) 10µs
Operating Junction Temperature -40°C to +175°C
Package Type PG-TO247-3
Mounting Type Through Hole
RoHS Compliant Yes

Applications

  • Uninterruptible Power Supplies (UPS) – High-frequency switching for power backup systems

  • Solar Energy Systems – DC-AC inverters for photovoltaic installations

  • Industrial Heating and Welding – High-frequency welding converters and induction heating equipment (up to 100kHz)

  • Motor Drives – Variable frequency drives and industrial motor control

  • Switched-Mode Power Supplies (SMPS) – High-efficiency power conversion

  • PTC Heaters – Temperature control in automotive and industrial heating systems

  • On-Board Chargers (OBC) – EV charging applications

  • Converters with High Switching Frequency – 20kHz to 100kHz hard-switching topologies

  • Electromagnetic Cookers (IH) – Induction heating cooking appliances


Note: The IKW40N120H3 is an active, in-production device from Infineon Technologies. For automotive-qualified variants requiring AEC-Q101 certification, please refer to the IKW40N120H3series documentation . For applications requiring higher current ratings, consider the IKW50N120H3 or IKW75N120H3 variants within the same HighSpeed 3 family.

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