STF7N65M2 – N Channel Power MOSFET – STMicroelectronics

Key features:

  • N-Channel Enhancement Mode MOSFET
  • Drain-Source Voltage: 650V
  • Continuous Drain Current: 5A
  • Low On-Resistance: 0.98Ω (typ.) / 1.15Ω (max)
  • Extremely low gate charge: 9nC
  • 100% avalanche tested
  • Zener-protected gate
  • Excellent output capacitance (Coss) profile
  • Operating Temperature: -55°C to +150°C
  • TO-220FP (Full Pack) isolated package

The STF7N65M2 is an N‑channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology . This technology combines a strip layout with an improved vertical structure, resulting in both low on-resistance and optimized switching characteristics, making it suitable for demanding high-efficiency converters .

The device features a 650V drain-source breakdown voltage and can handle 5A of continuous drain current, with a typical on-resistance of just 0.98Ω . The extremely low gate charge of 9nC and low input capacitance (270pF) enable fast switching operation with reduced driving losses .

Key built‑in protections include 100% avalanche testing to ensure ruggedness against voltage transients, and Zener‑protected gate circuitry to enhance reliability . The TO-220FP (Full Pack) package features a fully molded, isolated case, which simplifies heat sink installation as no insulating washers are required.

The “F” in the part number indicates the TO‑220FP (Full Pack) package, which is electrically isolated. For other package variants, STMicroelectronics offers:

  • STP7N65M2 – TO-220 (non‑isolated)

  • STU7N65M2 – IPAK (TO‑251)

  • STD7N65M2 – DPAK (TO‑252) surface mount

Parameters

Parameters Specifications
Manufacturer STMicroelectronics
Part Number STF7N65M2
FET Type N-Channel Enhancement Mode
Technology MDmesh™ M2
Drain-Source Voltage (Vdss) 650V
Continuous Drain Current (Id) @ 25°C 5A
Pulsed Drain Current (Idm) 20A
Gate-Source Voltage (Vgs) Max ±25V
On-Resistance Rds(on) Typ 0.98Ω @ Vgs=10V, Id=2.5A
On-Resistance Rds(on) Max 1.15Ω @ Vgs=10V, Id=2.5A
Gate Threshold Voltage Vgs(th) 2V – 4V (typical 3V)
Total Gate Charge (Qg) 9nC @ Vgs=10V
Input Capacitance (Ciss) 270pF @ Vds=100V
Output Capacitance (Coss) 33pF (typical)
Reverse Transfer Capacitance (Crss) 0.8pF @ Vds=100V
Power Dissipation (Pd) 20W
Operating Junction Temperature -55°C to +150°C
Package Type TO‑220FP (Full Pack / Isolated)
Mounting Type Through Hole
RoHS Compliant Yes

Applications

  • Switching Power Supplies (SMPS) – High-efficiency AC-DC converters for consumer and industrial electronics

  • LED Lighting Drivers – Offline (non‑isolated and isolated) LED power supplies, particularly suitable for offline lighting applications requiring 650V rating

  • Home Appliances – Auxiliary power supplies for refrigerators, washing machines, air conditioners, and other household electronics

  • Battery Chargers – High-voltage switching stages for battery charging circuits

  • Adapter Power Supplies – High‑efficiency power adapters for laptops, monitors, and other peripherals

  • Industrial Power Supplies – Small to medium power industrial converters and auxiliary power units

  • Flyback Converters – Primary-side switching in flyback topologies commonly used in low‑to‑medium power offline applications

Note: The TO‑220FP (Full Pack) package is electrically isolated, which eliminates the need for insulating hardware when mounting to a heat sink. For surface‑mount designs, consider the STD7N65M2 (DPAK package) variant.

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