The IRF3205 is a high-current N-Channel Power MOSFET manufactured by Infineon Technologies(formerly International Rectifier) . It is part of the advanced HEXFET® power MOSFET family, utilizing fifth-generation processing techniques to achieve extremely low on-resistance per silicon area .
The device is specifically designed for high-power switching applications, capable of handling up to 110A of continuous drain current and 55V drain-source voltage . Its ultra-low on-resistance of 8.0mΩ minimizes conduction losses, while the fast switching speed enables high-efficiency operation in switching power supplies, motor drives, and inverters .
A key feature of the IRF3205 is its avalanche rating, allowing it to safely withstand voltage transients without failure . The device also features a dynamic dv/dt rating and is fully avalanche rated, making it suitable for rugged industrial environments.
The IRF3205 is available in multiple package variants:
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IRF3205PBF: TO-220 through-hole (PbF lead-free)
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IRF3205SPBF: D2Pak (TO-263) surface mount
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IRF3205LPBF: TO-262 through-hole
The “Z” variants (e.g., IRF3205Z) offer even lower on-resistance (6.5mΩ) and improved performance for automotive applications.




