The IR2110S is a high-voltage, high-speed power MOSFET and IGBT gate driver IC from Infineon Technologies (formerly International Rectifier) . It features independent high-side and low-side referenced output channels, making it ideal for half-bridge and full-bridge power stage applications.
The device utilizes proprietary HVIC (High Voltage Integrated Circuit) and latch-immune CMOS technologies, enabling ruggedized monolithic construction . The floating channel is designed for bootstrap operation, allowing the high-side driver to operate with a floating reference (the switch node voltage) that can be hundreds of volts above system ground .
The logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3 V logic levels . The output drivers feature a high-pulse-current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications .
Key protection features include undervoltage lockout (UVLO) for both high-side and low-side channels, which prevents power switches from operating in a high-resistance state—a primary cause of thermal failure . The cycle-by-cycle shutdown logic enables fast, precise overcurrent protection .
A bootstrap circuit is used to generate the high-side floating supply voltage (VB – VS) . When the low-side MOSFET conducts, VS is pulled down to COM potential, and VDD charges the bootstrap capacitor (CBOOT) via the bootstrap diode, establishing the floating supply voltage for the high-side driver.


