The EL817C is a phototransistor output optocoupler manufactured by Everlight Electronics, a leading Taiwanese optoelectronics company. The device consists of a gallium arsenide (GaAs) infrared emitting diode optically coupled to a silicon NPN phototransistor, all encapsulated in a compact 4-pin DIP package .
This optocoupler provides complete electrical isolation between input and output circuits through an optical transmission path, achieving an isolation voltage rating of 5000Vrms . This makes it ideal for applications requiring safety isolation, noise suppression, and signal transmission between circuits with different ground potentials.
The “C” suffix denotes the Current Transfer Ratio (CTR) grade. For the EL817C variant:
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CTR range: 200% to 400% at IF = 5mA, VCE = 5V
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Minimum CTR: 50% (industry standard compliance)
Pin Configuration (DIP-4) :
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Pin 1: Anode (LED positive)
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Pin 2: Cathode (LED negative)
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Pin 3: Emitter (phototransistor)
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Pin 4: Collector (phototransistor)




